1/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.04 - rev.a 2.5v drive nch mosfet rtr030n05 z structure z dimensions (unit : mm) silicon n-channel mosfet z features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (tsmt3). z application z inner circuit switching z packaging specifications package code taping basic ordering unit (pieces) rtr030n05 tl 3000 type z absolute maximum ratings (ta=25 c) ?1 ?1 ?2 parameter v v dss symbol 45 v v gss 12 a i d 3 a i dp 12 a i s 0.8 a i sp 12 w p d 1.0 c tch 150 c tstg ?55 to +150 limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ?1 pw10s, duty cycle1% ?2 when mounted on a ceramic board source current (body diode) z thermal resistance c / w rth (ch-a) 125 parameter symbol limits unit channel to ambient ? when mounted on a ceramic board ? each lead has same dimensions (1) gate (2) source (3) drain tsmt3 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 ( 2 ) ( 1 ) ( 3 ) 2.9 2.8 1.9 1.6 0.950.95 0.4 abbreviated symbol : pv (1) gate (2) source (3) drain ?1 esd protection diode ?2 body diode ?2 ?1 (3) (1) (2)
rtr030n05 data sheet 2/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.04 - rev.a z electrical characteristics (ta=25 c) g ate-source leakage d rain-source breakdown voltage z ero gate voltage drain current g ate threshold voltage s tatic drain-source on-state r esistance f orward transfer admittance i nput capacitance o utput capacitance reverse transfer capacitance t urn-on delay time r ise time t urn-off delay time f all time t otal gate charge g ate-source charge g ate-drain charge ?pulsed parameter symbol i gss y fs min. ?? 10 av gs = 12v, v ds =0v v dd 25v typ. max. unit conditions v (br)dss 45 ?? vi d = 1ma, v gs =0v i dss ?? 1 av ds = 45v, v gs =0v v gs (th) 0.5 ? 1.5 v v ds = 10v, i d = 1ma ? 48 67 i d = 3a, v gs = 4.5v r ds (on) ? 53 74 m ? m? m? i d = 3a, v gs = 4v ? 68 95 i d = 3a, v gs = 2.5v 2.8 ?? sv ds = 10v, i d = 3a c iss ? 510 ? pf v ds = 10v c oss ? 110 55 ? pf v gs = 0v c rss ? 12 ? pf f=1mhz t d (on) ? 19 ? ns t r ? 34 ? ns t d (off) ? 26 ? ns t f ? 6.2 ? ns q g ? 1.6 ? nc q gs ? 1.4 ? nc v gs = 4.5v q gd ?? nc i d = 3a v dd 25 v i d = 1.5a v gs = 4.5v r l 16.6? r g =10? r l 8.3? r g =10? ? ? ? ? ? ? ? ? ? z body diode characteristics (source-drain) (ta=25 c) v sd ?pulsed ? ?? 1.2 v forward voltage i s = 3a, v gs =0v parameter symbol min. typ. max. unit conditions
rtr030n05 data sheet 3/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.04 - rev.a 0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 v gs = 10v ta= 25c pulsed v gs = 4.0 v v gs = 2.5 v v gs = 2.0 v v gs = 1.8v 0.001 0.01 0.1 1 10 00.511.522.5 v ds = 10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 10 100 1000 0.01 0.1 1 10 v gs = 2.5v v gs = 4.0v v gs = 4.5v ta= 25c pulsed 0.01 0.1 1 10 00.511.5 v gs =0v pulsed ta= 125c ta=75c ta=25c ta=-25c 0 1 2 3 4 5 6 02 46 810 v gs = 1.8v ta=25c pulsed v gs = 4.5v v gs = 4.0v v gs = 2.5v v gs = 2.0v 10 100 1000 0.01 0.1 1 10 v gs = 4.0v pulsed ta=125c ta=75c ta=25c ta= -25c 10 100 1000 0.01 0.1 1 10 v gs = 4.5v pulsed ta=125c ta=75c ta=25c ta= -25c 0.1 1 10 0.01 0.1 1 10 v ds = 10v pulsed ta= -25c ta=25c ta=75c ta=125c 10 100 1000 0.01 0.1 1 10 v gs = 2.5v pulsed ta=125c ta=75c ta=25c ta= -25c fig .1 typical output characteristics( ) fig.2 typical output characteristics( ) fig .3 typical tr ansfer char acteristics fig .4 static drain-source on- state resistance vs. dr ain current( ) fig .5 static drain- source on-state resistance vs. drain current( ) fig.6 static drain-source on-state resistance vs. drain current( ) fig .7 static drain-source on- state resistance vs. dr ain current( ) fig.9 reverse drain current vs. sourse-drain voltage fig .8 forward transfer admittance vs. drain current drain current : i d [a] drain- source voltage : v ds [v] drain-source voltage : v ds [v] drain current : i d [a] drain current : i d [a] gate-source voltage : v gs [v] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : i d [a] static drain-source on- state resistance : r ds (on)[m ? ] forward transfer admittance : |yfs| [s] drain-current : i d [a] reverse drain current : is [a] source-drain voltage : v sd [v] v gs = 4.5v z electrical characteristics curves
rtr030n05 data sheet 4/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.04 - rev.a 0 50 100 150 200 02 46 810 ta=25c pulsed i d = 3.0a i d = 1.5a 0 1 2 3 4 5 01234567 ta=25c v dd = 25v i d = 3.0a r g =10 ? pulsed 10 100 1000 10000 0.01 0.1 1 10 100 ciss coss crss ta=25c f=1mhz v gs =0v 1 10 100 1000 10000 0.01 0.1 1 10 t f t d (on) t d (off) ta=25c v dd = 25v v gs =4.5v r g =10 ? pulsed t r fig .10 static drain-source on-state resistance vs. gate source voltage fig .12 dynamic input characteristics fig .13 typical capacitance vs. drain-source voltage fig .11 switching characteristics static drain-source on-state resistance : r ds (on)[m ? ] gate-source voltage : v gs [v] switching time : t [ns] drain-current : i d [a] gate-source voltage : v gs [v] total gate charge : qg [nc] drain-source voltage : v ds [v] capacitance : c [pf] z measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching time waveforms 90% 50% 50% 10% 10 % 90% 90 % 10% v gs v ds t on t off t r t d(on) t r t d(off) pulse width f ig.2-1 gate charge measurement circu it v gs i g (const.) r g v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd
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